The layer structure of GaInP/AlGaInP quantum well laser diodes (LDs) was grown on GaAs substrate using low-pressure meta......

The wavelength modulation indices are measured based on harmonic amplitude ratio of 4f_(amp)/6f_(amp) (4f_(amp) and 6f_(......

A novel no-guide light pen type 3D-coordinate measurement system with three sets of position sensitive devices (PSDs) to......

We demonstrate a technique for single transverse mode operation of high-power broad area laser diode (BAL). In the exper......

A new set of nonlinear rate equations that can describe the external cavity semiconductor laser with two optical feedbac......

Operating a laser diode in an external cavity, which provides frequency-selective feedback, is a very effective method t......

在Ｎｄ：ＹＡＧ激光器中，用单晶硅实现了被动锁模，得到了脉冲定义为２８ｐｓ左右，能量为约３μＪ的锁模脉冲，并对锁模机理作了初步解释。......

为了提高准连续输出功率为×102W量级的半导体激光器的输出功率和可靠性,采用双面散热方式提高传导冷却封装的散热能力。结果......